Engineering Education Research Center

Dr. Mohamed Osman

Professor in the School of Electrical Engineering and Computer Science

School of Electrical Engineering and Computer Science
Washington State University
Pullman, WA 99164-2752

Phone: 509-335-2301
Email: osman@eecs.wsu.edu

Engineering Education Research Interests
  • Teaching in large versus small classrooms
  • Methods for garnering interest and retention in math/science courses
Education
  • Ph.D., Arizona State University, Applied Physics, 1986.
  • M.S., University of Massachusetts, Electrical & Computer Engineering, 1982.
  • M.S., University of Arizona, Physics, 1980.
  • B.S., University of Khartoum, Physics (First Class Honors), 1977.
Professional Experience
  • 2003 - Present: Professor, School of Electrical Engineering & Computer Science, Washington State University.
  • 1995 - 2003, Associate Professor: School of Electrical Engineering & Computer Science, Washington State University.
  • 1998 - 2001, NASA Faculty Fellow: NASA Ames Research Center, Moffett Field, California.
  • 1995 and 1997, NASA Visiting Summer Faculty: NASA Ames Research Center, Moffett Field, California.
  • 1989 - 1995, Assistant Professor, School of Electrical Engineering & Computer Science, Washington State University.
  • 1993, Visiting Scientist, Walter Schottky Institute, Technical University of Munich, Germany.
  • 1986 - 1989, Research Scientist, Scientific Research Associates, Inc.; Glastonbury, Connecticut.
  • 1984 - 1986, Research Associate, Center for Solid State electronics Research; Arizona State University, Tempe, Arizona.
Awards
  • Oustanding Research Faculty, School of Electrical Engineering, WSU, 2003.
  • NASA Group Achievement Award: Ames IPT on Devices and Nanotechnology, 2000.
Teaching
  • Digital Logic Circuits
  • Microelectronic Circuits
  • Distributed Parameter Syatems
  • Physics of Semiconductor Devices
  • Microelectronic Fabricaton
  • RF and Microwave Circuits and Systems
  • Optoelectronics
  • RF MOSFET Modeling
  • Electromagnetics
Selected Publications and Book Sections
  • M.A. Imam, M.A. Osman, and A.A. Osman, “ Simulation of partially and near-fully depleted SOI MOSFET Devices and Circuits using SPICE compatible Physical sub-circuit model,” Microelectronics Reliability,, Vol. 44, pp. 53-63 (2004).
  • . Daghighi and M.A. Osman, “Two dimesnional Model for Simulation of Body Contacts in SOI MOSFETs,” Microelectronics Engineering,, Vol. 70,, pp. 83-90, 2003.
  • K.O. Goyal, R. Mahalingam, P.D. Pedrow and M. A. Osman,"Mass Transport Characteristics in a Pulsed Plasma Enhanced Chemical Vapor Deposition Reactor for Thin Polymer Film Deposition," IEEE Transactions on Plasma Science, Vol. 29, No. 1, February 2001.
  • L.V. Shepsis, P.D. Pedrow, R. Mahalingham, and M.A. Osman, "Modeling and Experimental Comparison of Pulsed Plasma Deposition of Aniline," Thin Solid Films Vol. 385, pp. 11-21, 2001.
  • M.A. Osman and D. Srivastava, "Temperature Dependence of the Thermal Conductivity of Carbon Nanotubes," NanotechnologyVol. 12 No 1, pp 21-2, 2001.
  • L.V. Shepsis, P.D. Pedrow, R. Mahalingham, and M.A. Osman, "Modeling and Measurement of Monomer Pressure Evolution in Inductively Coupled Pulsed Plasma Reactor for Thin Polymer Films," IEEE Trans. On Plasma Science Vol. 28, pp. 2172-2178, 2000.
  • M.A. Imam, H. Fu, M.A. Osman, and A.A. Osman, "Determination and assessment of the floating body voltage of SOI CMOS devices," IEEE Trans. Electron Dev. vol. 48, pp. 688-695, 2001.
  • M.A. Imam, H. Fu, M.A. Osman, and A.A. Osman,"A simple method to determine the floating body voltage of SOI CMOS devices," IEEE Electron Dev. Lett., vol. 21,pp. 21-23, 2000.
  • M.A. Imam, M.A. Osman, and A.A. Osman, "Threshold Voltage Model for deep-Submicron Fully Depleted SOI MOSFETs with Back gate Substrate Induced Surface Potential Effects," Journal of Microelectronics Reliability, vol.39 , pp. 487-495 , 1999.
  • P.D. Pedrow, K. Goyal, R. Mahalingam, and M.A. Osman, "Explosion model applied to an intense pulsed plasma source for thin film deposition," IEEE Trans. on Plasma Science, vol. 25, pp. 89-96, 1997.
  • M.A. Imam, M.A. Osman, and A.A. Osman, "MOSFET Global Modeling for Deep Submicron Devices with a Modified BSIM1 Spice Model," IEEE Trans. Computer Aided Design, vol. 15, pp. 446-451, 1996.
  • R. Rodrigues, M. Sailor, P. Buchberger, R.A. Hopfel, N. Nintunze, and M.A. Osman, "Ultrafast energy loss of electrons in p-GaAs," Applied Physics Letters, Vol. 67, (July 1995).
  • N. Nintunze and M.A. Osman, "Hole Drift Velocity in Warped Band Model of GaAs," Semiconductor Science & Technology , Vol. 10, 11-17 (1995).
  • A.A. Osman, M.A. Osman, N.S. Dogan, and M. Imam, "Zero Temperature Coefficient Bias Points of Partially-Depleted SOI MOSFETS," IEEE Trans. Electron Devices, Vol. 42, Sept. 1995.
  • A.A. Osman, M.A. Osman, N.S. Dogan, and M.A. Imam, "Extended Tanh Law MOSFET Model for High Temperature Circuit Simulation," IEEE Journal of Solid State Circuits , Vol. 30, 108-11, February 1995.

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Engineering Education Research Center, Washington State University, Pullman WA 99164-2714 | (509) 335-6104 | eerc@wsu.edu